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2008-02-11 rev. 2.5 page 1 spw32n50c3 cool mos? power transistor v ds @ t jmax 560 v r ds(on) 0.11 ? i d 32 a feature ? new revolutionary high voltage technology ? ultra low gate charge ? periodic avalanche rated ? extreme d v /d t rated ? ultra low effective capacitances ? improved transconductance p g -to247 type package ordering code spw32n50c3 p g -to247 q67040-s4613 marking 32n50c3 maximum ratings parameter symbol value unit continuous drain current t c = 25 c t c = 100 c i d 32 20 a pulsed drain current, t p limited by t j max i d p uls 96 avalanche energy, single pulse i d = 10 a, v dd = 50 v e as 1100 mj avalanche energy, repetitive t ar limited by t jmax 1 ) i d = 20 a, v dd = 50 v e ar 1 avalanche current, repetitive t ar limited by t j max i ar 20 a gate source voltage v gs 20 v gate source voltage ac (f >1hz) v gs 30 power dissipation, t c = 25c p tot 284 w operating and storage temperature t j , t st g -55... +150 c reverse diode dv/dt dv/dt 15 v/ns 4) please note the new package dimensions arccording to pcn 2009-134-a
rev. 2.5 page 2 2008-02-11 spw32n50c3 maximum ratings parameter symbol value unit drain source voltage slope v ds = 400 v, i d = 32 a, t j = 125 c d v /d t 50 v/ns thermal characteristics parameter symbol values unit min. typ. max. thermal resistance, junction - case r thjc - - 0.44 k/w thermal resistance, junction - ambient, leaded r thja - - 62 soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s t sold - - 260 c electrical characteristics, at t j=25c unless otherwise specified parameter symbol conditions values unit min. typ. max. drain-source breakdown voltage v (br)dss v gs =0v, i d =0.25ma 500 - - v drain-source avalanche breakdown voltage v (br)ds v gs =0v, i d =20a - 600 - gate threshold voltage v gs ( th ) i d =1800 ? , v gs = v d s 2.1 3 3.9 zero gate voltage drain current i dss v ds =500v, v gs =0v, t j =25c, t j =150c - - 0.5 - 25 250 a gate-source leakage current i gss v gs =20v, v ds =0v - - 100 na drain-source on-state resistance r ds(on) v gs =10v, i d =20a, t j =25c t j =150c - - 0.09 0.27 0.11 - ? gate input resistance r g f =1mhz, open drain - 0.8 - please note the new package dimensions arccording to pcn 2009-134-a rev. 2.5 page 3 2008-02-11 spw32n50c3 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. transconductance g fs v ds 2* i d * r ds(on)max , i d =20a - 30 - s input capacitance c iss v gs =0v, v ds =25v, f =1mhz - 4200 - pf output capacitance c oss - 1700 - reverse transfer capacitance c rss - 90 - effective output capacitance, 2) energy related c o(er) v gs =0v, v ds =0v to 400v - 181 - pf effective output capacitance, 3) time related c o(tr) - 350 - turn-on delay time t d(on) v dd =380v, v gs =0/10v, i d =32a, r g =2.7 ? - 20 - ns rise time t r - 30 - turn-off delay time t d(off) - 100 - fall time t f - 10 - gate charge characteristics gate to source charge q gs v dd =380v, i d =32a - 15 - nc gate to drain charge q gd - 90 - gate charge total q g v dd =380v, i d =32a, v gs =0 to 10v - 170 - gate plateau voltage v (plateau) v dd =380v, i d =32a - 5 - v 1 repetitve avalanche causes additional power losses that can be calculated as p av = e ar * f . 2 c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss . 3 c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . 4 i sd <=i d , di/dt<=200a/us, v dclink =400v, v peak rev. 2.5 page 5 2008-02-11 spw32n50c3 1 power dissipation p tot = f ( t c ) 0 20 40 60 80 100 120 c 160 t c 0 40 80 120 160 200 240 w 320 spw32n50c3 p tot 2 safe operating area i d = f ( v ds ) parameter : d = 0 , t c =25c 10 0 10 1 10 2 10 3 v v ds -2 10 -1 10 0 10 1 10 2 10 a i d tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms dc 3 transient thermal impedance z thjc = f ( t p ) parameter: d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -1 s t p -4 10 -3 10 -2 10 -1 10 0 10 k/w z thjc d = 0.5 d = 0.2 d = 0.1 d = 0.05 d = 0.02 d = 0.01 single pulse 4 typ. output characteristic i d = f ( v ds ); t j =25c parameter: t p = 10 s, v gs 0 5 10 15 v 25 v ds 0 20 40 60 80 100 a 140 i d vgs = 4.5v vgs = 5v vgs = 5.5v vgs = 6v vgs = 7v vgs = 20v please note the new package dimensions arccording to pcn 2009-134-a rev. 2.5 page 6 2008-02-11 spw32n50c3 5 typ. output characteristic i d = f ( v ds ); t j =150c parameter: t p = 10 s, v gs 0 5 10 15 v 25 v ds 0 20 40 a 80 i d vgs = 4v vgs = 4.5v vgs = 5v vgs = 5.5v vgs = 6v vgs = 20v 6 typ. drain-source on resistance r ds(on) = f ( i d ) parameter: t j =150c, v gs 0 10 20 30 40 50 60 i d 80 i d 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 ? 2 r ds(on) vgs = 4v vgs = 5.5v vgs = 4.5v vgs = 5v vgs = 2 0 7 drain-source on-state resistance r ds(on) = f ( t j ) parameter : i d = 20 a, v gs = 10 v -60 -20 20 60 100 c 180 t j 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 ? 0.65 spw32n50c3 r ds(on) typ 98% 8 typ. transfer characteristics i d = f ( v gs ); v ds 2 x i d x r ds(on)max parameter: t p = 10 s 0 1 2 3 4 5 6 7 8 v 10 v gs 0 20 40 60 80 100 120 a 160 i d tj = 25c tj =150c please note the new package dimensions arccording to pcn 2009-134-a rev. 2.5 page 7 2008-02-11 spw32n50c3 9 typ. gate charge v gs = f ( q gate ) parameter: i d = 32 a pulsed 0 40 80 120 160 200 nc 260 q gate 0 2 4 6 8 10 12 v 16 spw32n50c3 v gs 0.2 v ds max 0.8 v ds max 10 forward characteristics of body diode i f = f (v sd ) parameter: t j , t p = 10 s 0 0.4 0.8 1.2 1.6 2 2.4 v 3 v sd -1 10 0 10 1 10 2 10 a spw32n50c3 i f t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%) 11 avalanche soa i ar = f ( t ar ) par.: t j 150 c 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 s t ar 0 5 10 a 20 i ar tj(start)=25c tj(start)=125c 12 avalanche energy e as = f ( t j ) par.: i d = 10 a, v dd = 50 v 20 40 60 80 100 120 c 160 t j 0 0.2 0.4 0.6 0.8 mj 1.2 e as please note the new package dimensions arccording to pcn 2009-134-a rev. 2.5 page 8 2008-02-11 spw32n50c3 13 drain-source breakdown voltage v (br)dss = f ( t j ) -60 -20 20 60 100 c 180 t j 450 460 470 480 490 500 510 520 530 540 550 560 570 v 600 spw32n50c3 v (br)dss 14 avalanche power losses p ar = f ( f ) parameter: e ar =1mj 10 4 10 5 10 6 hz f 0 200 400 600 w 1000 p ar 15 typ. capacitances c = f ( v ds ) parameter: v gs =0v, f =1 mhz 0 100 200 300 v 500 v ds 0 10 1 10 2 10 3 10 4 10 5 10 pf c ciss crss coss 16 typ. c oss stored energy e oss = f ( v ds ) 0 100 200 300 v 500 v ds 0 2 4 6 8 10 12 14 16 18 j 22 e oss please note the new package dimensions arccording to pcn 2009-134-a rev. 2.5 page 9 2008-02-11 spw32n50c3 definition of diodes switching characteristics please note the new package dimensions arccording to pcn 2009-134-a 8 02 11 rev. 2.5 p d j h 6 3 :3 1 & |